| 摘要 |
PURPOSE:To enable measurement of the concentration of dissolved H2O2, by providing a conductor layer on the surface of a gate section of an IGFET. CONSTITUTION:This sensor includes at least a conductor layer 7 provided on the top of a gate section of an IGFET, an electrolytic layer 8 containing an Fe (II) complex provided on the top of the layer 7 and a reference electrode provided in the layer 8. As the layer 8 gets in contact with a liquid to be measured, hydrogen peroxide in a solution to be measured infiltrates the layer 8. The hydrogen peroxide entered into the layer 8 oxidizes the Fe (II) complex in the layer 8 to be turned to an oxidation body. As a result, the concentration ratio between the reduction body and the oxidation body of the Fe complex varies to changes a potential of the layer 7 provided at the gate section 2. The resulting changes in the potential are outputted as drain current to measure the concentration of dissolved oxygen. Here, to keep the potential of the solution at a specified level with respect to a source 3, that is, to keep a gate voltage within a measurable range, a bias electrode is applied through a reference electrode. |
