| 摘要 |
PURPOSE:To improve the sensitivity of a CCD image pickup device remarkably and to improve resolution, by forming a CCD in a long recess part, which is formed in a high resistance semiconductor layer in one direction. CONSTITUTION:A recess part, which has a width W and a depth H, is formed approximately vertically from the surface of a p-type semiconductor substrate 101 having a high resistance value. First polysilicon 103 and second polysilicon 104 are formed through an insulating film 102. A p<+> region 105 is formed as a channel stop directly beneath the recess part phi1 pulses are applied to the first polysilicon 103, and phi2 pulses are applied to the second polysilicon. Thus charge transfer is carried out in the longitudinal direction of the recess part. When the channel stop 105 is used, two charge transfer region 106 and 107 can be utilized. when the channel stop is not formed, one charge transfer region 109 is utilized. In this way, a plurality of transfer gate electrodes are provided on the surface of the long recess part, which is formed in the highly resistive semiconductor layer in one direction. Therefore the maximum charge transfer quantity of the CCD, which is formed at the side well of the recess part, depends on the depth H of the recess part. |
