| 摘要 |
PURPOSE:To prevent accurrence of hillocks and to prevent wiring disconnection due to electromigration, by using an interconnection composed of a layer consisting mainly of Al, an alumina film and a layer including Si which are superposed one after another. CONSTITUTION:The surface of an Si substrate having an element region 2 is covered with an Si oxide film 3. A contact hole 4 is formed in the oxide film 3. Under this state Al is deposited by sputtering to form an Al layer 5. Then, an alumina film 6 is formed by natural oxidation on the surface of the Al layer 5. Thereafter, a tungsten silicide layer 7 is deposited on the film 6 by sputtering. Then, with photoresist 8-1 and 8-2, which are patterned in a specified pattern as masks, ion etching is performed, and interconnections 9-1 and 9-2 are formed. Thus, appearance of hillock can be prevented, and wiring disconnection due to electromigration can be also prevented. |
