| 摘要 |
PURPOSE:To form a resist pattern having no defect, and to enable alignment having high accuracy by shaping a light absorbing film onto a high reflecting film, exposing extinction film, increasing the transmittance of the light absorbing film and aligning the light absorbing film. CONSTITUTION:A process, in which a light absorbing film 6 having properties that transmittance is augmented by exposure is formed to a circuit pattern section and an alignment mark section, a process in which a resist 7 is shaped onto the light absorbing film 6, etc., are provided. the light absorbing film 6 is formed onto a high reflecting film, and exposed, thus reducing reflection at stepped sections, then removing defects in a resist pattern. Since the light absorbing film 6 having properties that transmittance is increased by exposure is used, the light absorbing film 6 in the alignment mark section is exposed 8, the transmittance of the light absorbing film 6 is augmented and the light absorbing film 6 is aligned, on the other hand, reflected beams from the alignment mark section can be enlarged, and an alignment signal having a mark-edge contrast is acquired, thus enabling alignment having a high accuracy. |
