| 摘要 |
PURPOSE:To enlarge a proper temperature range for heating a substrate and a range for selecting kinds of resists by irradiating the whole surface of the resist with light of wavelength for decomposing a photosensitive agent before an ultraviolet curing step to decompose it in advance, and then, executing the steps, including heating of the substrate, following the ultraviolet curing step. CONSTITUTION:A positive type resist pattern 1 is formed by exposing the resist film and developing it. The photosensitive agent remaining in the resist is decomposed and removed by irradiating the pattern 1 with the photosensitive agent decomposing wavelength light 4. The resist pattern 1 is irradiated with ultraviolet rays 5 while the substrate 3 is being heated, thus permitting production of nitrogen due to decomposition of naphthoquinonediazide added to the agent to be prevented, accordingly, consideration on nitrogen foaming phenomenon to be made unnecessary, and the proper range for heating the substrate to be enlarged, and the range of selecting the kinds of resists to be extended in accordance with an amount of naphthoquinonediazide to be added. |
