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发明名称
ELECTRICALLY REPROGRAMMABLE NONVOLATILE MEMORY FLOATING GATETYPE MEMORY DEVICE WITH REDUCED TUNNEL AREA AND MANUFACTUREOF THE SAME
摘要
申请公布号
JPS639981(A)
申请公布日期
1988.01.16
申请号
JP19870157480
申请日期
1987.06.24
申请人
SGS MICROELETTRONICA SPA
发明人
JIYUSETSUPE KORUDA
分类号
H01L21/8247;H01L29/788;H01L29/792
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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