| 摘要 |
PURPOSE:To improve the dry-etching resistance of a photoresist, and to enhance an etching selection ratio of a substance to be etched to the resist, by arranging a substance consuming active radicals or ions in plasma which act as etching species to the resist on the substance to be etched on the surface of a wafer stage. CONSTITUTION:A base plate 17 consisting of single-crystal silicon is provided on the surface of an indentation section in a wafer stage 15 of a dry etching device. Other sections of the wafer stage 15 are constituted of quartz. When CF<+>3 impinges on an unpatterned SiO2 film area of a ferrite substrate 16, a chemical reaction occurs to remove the SiO2 film while producing SiF4 which take the form of gas at room temperature. Fluorine radicals F* generated in plasma in the same manner as CF<+>3 react with single-crystal silicon forming the base plate 17 and generated SiF4, and are consumed completely by the base plate 17. Accordingly, F* etching a resist is minimized only by the consuming section of F*, thus effectively reducing resist etching by F*. |
