| 摘要 |
PURPOSE:To reduce the photoconductive after image component by a method wherein the picture element electrodes on an image pickup chip are formed into a compound structure of a tin oxide film used on the surface part in contact with an a-Si:H film. CONSTITUTION:A signal charge storage diode 13 and a signal charge reading out part 14 are formed on a semiconductor substrate 11 while within a solid image pickup device composed of a photoconductor film 2 comprising hydrogenated amorphous silicon film laminated on a solid image pickup element chip 1 with a picture element electrode 3 formed on the topmost part thereof, the picture element electrode 3 on the solid image pickup element chip 1 is formed into a compound structure of a primary electrode 19 and a tin oxide film 20 in contact with the photoconductor film 2. For example, each picture element electrode 3 is formed into a compound structure of the primary electrode 19 using a Cr electrode and the tin oxide film 20 covering the Cr electrode 19. Through these procedures, the tin oxide film 20 hardly react to an a-Si:H film formed thereon compared with conventional metallic materials so that the interfacial trap of a-Si:H film may be lessened to reduce the photoconductive after image component due to the interfacial trap. |
