| 摘要 |
New technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure. In accordance with this technique, an electrical contact is formed simply by depositing a region of material e.g., 130, (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 mu OMEGA -cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a region, e.g., 130, including a compound having a composition which includes nickel as well as one of the three Group V elements. |
