发明名称 X-ray reduction projection exposure system of reflection type.
摘要 <p>An X-ray exposure apparatus includes a stage (MS) for holding a mask having a pattern for circuit manufacturing, a stage (MF) for holding a wafer to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including reflecting mirror arrangement, containing at least three but not more than five reflecting mirrors (M1,M2,M3) coated with multi-layer films, for receiving X-rays from the mask and directing then to the wafer to expose the wafer to the pattern of the mask with the X-ray in a reduced scale.</p>
申请公布号 EP0252734(A2) 申请公布日期 1988.01.13
申请号 EP19870306037 申请日期 1987.07.08
申请人 CANON KABUSHIKI KAISHA 发明人 SUZUKI, MASAYUKI;MOCHIZUKI, NORITAKA;MINAMI, SETSUO;OGURA, SHIGETARO;FUKUDA, YASUAKI;WATANABE, YUTAKA;KAWAI, YASUO;KARIYA, TAKAO
分类号 G02B17/06;G03F7/20;(IPC1-7):G03F7/20;G02B5/08 主分类号 G02B17/06
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