| 摘要 |
PURPOSE:To improve a distortion characteristic in an input part, by providing a semiconductor area for controlling the threshold voltage of its area, directly below one transfer electrode. CONSTITUTION:An input part is formed by input gate electrodes 1, 2, a semiconductor substrate 8 and an opposite conductive type area 7. Directly below one transfer electrode 3a being adjacent to this electrode 2, the substrate 8 and a semiconductor area 18 having an opposite conductive type are provided in order to control the threshold voltage. At first, a pulse phi1 of two-phase pulse driving voltage is transferred to low potential from high potential, and even if the potential of an input diode 7 becomes ''0''V, a carrier being directly below the electrode 3a is not transferred to an electrode 3b because the surface potential being directly below the electrode 3a takes a negative value against the potential of the diode 7. Subsequently, in the process in which the pulse phi1 is transferred to high potential from low potential, the surface voltage being directly below the electrode 3a is varied with a constant delay time because the threshold voltage being directly below the electrode 3a is higher positive voltage. In this way, the time required for balancing the potential is taken more, and the distortion factor is improved. |
