| 摘要 |
PURPOSE:To form a deposited film having a uniform film thickness and film quality on a cylindrical substrate without rotating the same by providing plural gas release holes to the side wall of gaseous raw material introducing pipes and controlling the average sectional area of the introducing pipes, the average sectional area of the release hole and the average number of the release holes per piece of the introducing pipes by the specific equations. CONSTITUTION:The inside of a vacuum vessel 1 is evacuated to a vacuum and the cylindrical substrate 6 is heated and held to and held at a prescribed temp. Gaseous raw materials are then fed from a gas supply system 20 to the introducing pipes 8 and are released from the plural release holes 9 to the substrate 6 surface. A high frequency is impressed between a cathode electrode 2 and the substrate 6 from a voltage impressing means 13 and the deposited film is formed on the substrate 6 surface by plasma discharge. The average sectional area of the gaseous raw material introducing pipes 8, designated as SR(mm<2>), the average sectional area of the gas release holes 9, designated as Sr(mm<2>), and the average number of the release holes 9 per piece of the introducing pipes 8, designated as n(piece), are so controlled as to respectively satisfy the equations 0.001<=Sr/SR<=0.1, Sr/SRXn<=2 (where n>=2). The deposited film having the uniform film thickness and film quality is thus stationarily formed. |
