| 摘要 |
<p>A vertical MOS transistor which comprises p type base region (22) formed in n type substrate (21), n type source region (23) formed in the base region (22), and source electrode (28). The base region (22) involves first, second and third regions (22a, 22b, 22c). Channel region (26) is formed on the surface of first region (22a), the source region (23) is formed in second region (22b), third region (22c) contacts source electrode (28), and fourth region (22d) of base region (22) extends from third region (22c) so as to divide the source region and contact the channel region.</p> |
