| 摘要 |
<p>A compression-type semiconductor device comprises a semiconductor element and compression means (13, 14) for maintaining the semiconductor element in a compressed state. The semiconductor element comprises a semiconductor substrate (21) having first and second major surfaces (21a, 21b). The semiconductor substrate (21) has a first semiconductor region including a plurality of semiconductor sections. Each semiconductor section is composed of a plurality of divided semiconductor segments (22) of a first conductivity type projecting on the first major surface (21a) of the substrate (21). These segments (22) have substantially rectangular top surfaces which are present in a plane. The segments (22) in each semiconductor section have approximately the same size and are arranged so that the long sides of adjacent rectangles face each other. A second semiconductor region (23) of a second conductivity type opposite to the first conductivity type is formed in the first major surface (21a) of the substrate (21), surrounding the individual semiconductor segments (22). On the first semiconductor region first electrode means including separate electrode members (27) is formed. The separate electrode members (27) each substantially cover the top surfaces of the segments in each of the semiconductor sections, and electrically connect these segments (22). Second electrode means (28) is formed on the exposed surface of the second semiconductor region (23). Third electrode means (29) is formed on the second major surface (21b) of the semiconductor substrate (21). Insulation means covers the second electrode means (28) between the adjacent semiconductor segments (22) in each semiconductor section.</p> |
