| 摘要 |
PURPOSE:To prevent defective transfer from occurring, by making impurity concentration of channel regions, in which horizontal shift registers are formed, become larger than that of channel regions, in which vertical shift registers are formed. CONSTITUTION:After channel stop regions 1-1 and 1-2 are formed, the first ion implantaion is performed to form channels in both vertical and horizontal shift registers 5, 6, and then the second ion-implantation is performed with a resist serving as a mask in the second ion.implanting regions 4, so that impurity concentration of the channel regions, in which the registers 6 are formed, is made to become larger than that of the channel regions, in which the registers 5 are formed. Hence, defective transfer of signal charges can be prevented from occurring at the outlet of the vertical shift registers. |
