| 发明名称 |
Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers |
| 摘要 |
A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 ANGSTROM and/or a particular range of etching rate when etched with a predetermined etchant.
|
| 申请公布号 |
US4719501(A) |
申请公布日期 |
1988.01.12 |
| 申请号 |
US19850815113 |
申请日期 |
1985.12.26 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NAKAGAWA, KATSUMI;KOMATSU, TOSHIYUKI;HIRAI, YUTAKA;OSADA, YOSHIYUKI;OMATA, SATOSHI;NAKAGIRI, TAKASHI |
| 分类号 |
H01L21/285;H01L29/04;H01L29/786;H01L29/812;H01L29/872;H01L31/0368;H01L31/0392;H01L31/108;H01L31/18;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
