| 摘要 |
<p>PURPOSE:To significantly reduce the stress to generate in a semiconductor element after a die-bonding treatment is performed and to prevent the generation of the slip dislocation of a semiconductor device by providing grooves on a heat sink at the outer peripheral parts of the semiconductor element fusion-welded on the heat sink. CONSTITUTION:A heat sink 10 with grooves 11 formed on the surface on a side where a die-bonding treatment is performed on a semiconductor element 13 and also, at the outer peripheral parts of the semiconductor element 13 die-bonded through a solder 12 is provided. Here, the main stress of the central part of the semiconductor element 13 is large within an extent that the depth of the grooves 11 is small and the main stress becomes smaller according as the depth of the grooves 11 becomes larger and deeper, but the deep grooves 11 make smaller and weaker the mechanical strength as the thickness of the heat sink 10 is small. Accordingly, the interval between the grooves 11 and the width and depth of the grooves 11 are decided in such a way as to become the optimum in respective cases according to the kinds of a semiconductor device and a die-bonding treatment device. Thereby, the thermal stress to generate in the semiconductor element at the time of die-bonding treatment is reduced and the generation of the slip dislocation of the semiconductor element is prevented.</p> |
