| 摘要 |
PURPOSE:To make connection of an infrared detecting part to a silicon CCD unnecessary, and to make infrared rays injectable from the either surfaces of the upper surface and the lower surface by a method wherein a second semiconductor layer of narrow forbidden bandwidth is grown on a first semiconductor layer of broad forbidden bandwidth, the CCD is formed on the first semiconductor layer, and the infrared detecting part is formed on the second semiconductor layer. CONSTITUTION:A first semiconductor layer 2 is formed on a substrate 1 for epitaxial growth, and second semiconductor layers 3 are formed in island types on the first semiconductor layer 2 thereof. Forbidden bandwidth of the first semiconductor layer 2 is set to be broader than forbidden bandwidth of the second semiconductor layer 3, an infrared detecting part 4 is formed on the second semiconductor layer 3, and a signal processing part S to be connected to the infrared detecting part 4 thereof is formed on the exposed first semiconductor layer 2. Accordingly, work to connect a charge coupled device (CCD) chip consisting of silicon and the infrared detecting part 4 consisting of Hg0.8Cd0.2Te is made as to be unnecessary, and moreover a restriction that the substrate 1 for epitaxial growth of Hg1-xCdxTe have to be transparent to infrared rays is removed. |
