EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR,申请号JP19860148653-传众专利搜索

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发明名称	EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPS635515(A)	申请公布日期	1988.01.11
申请号	JP19860148653	申请日期	1986.06.25
申请人	SEIKO EPSON CORP	发明人	KOMATSU HIROSHI
分类号	H01L21/205;H01L21/263	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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