| 摘要 |
PURPOSE:To form an electrode for a semiconductor element with a stable interface by laminating an N-type conductive layer, a P-type conductive layer and a metallic electrode layer on an electrode-leading-out section for an amorphous silicon film in succession. CONSTITUTION:An N+ layer 3 is shaped onto an a-Si film 2 as an I layer in the same manner as conventional devices, and a P-type conductive layer 7 is deposited on the layer 3 in thickness of 100-3000Angstrom under the conditions of power:10W, pressure: 0.1Torr and a substrate temperature: 300 deg.C while B2H6/H2 (500ppm) is mixed with SiH4 and caused to flow at a flow rate of 10sccm. The film thickness of the P-type conductive layer 7 at that time must be changed in response to the thickness of the N<+> layer 3. P atoms in the N<+> layer can be compensated by B atoms in the P-type conductive layer before P atoms in the N<+> layer reach to a metallic electrode layer 4 by bringing the quantity of P in the N+ layer and the quantity of B in the P-type conductive layer to the same extent. The flow rate of B2H6 may be determined so as to be brought to conductivity in the same extent to the conductivity (10<-6>OMEGA.cm or more) when considering the doping of B into the P-type conductive layer 7. |
