| 摘要 |
PURPOSE:To make the operational characteristics of elements in an IC uniform, by forming gate electrodes by patterning, by which the directions of the elements are aligned in the same direction, and implanting impurities by slant ion implantation in an element forming region. CONSTITUTION:Gate electrodes 13 are laminated and formed on a gate oxide film 12 on a silicon substrate 11. At this time the electrodes 13 are patterned so that the direction of MOS FETs are aligned in the same direction. Then, with the electrodes 13 as a masks, N-type impurities are implanted in the vicinities of the electrodes 13 by ion implantation, and sources 14 and drains 15 are formed. At this time the ion implantation is carried out in the slant direction of about 7 deg. with respect to the substrate 11 toward the side of the drains 15 from the side of the sources 14. Thus the operating characteristics of the elements in an IC are made uniform. |
