| 摘要 |
PURPOSE:To make an interlayer insulating film thin, by covering the upper part and the side surface of a first polycrystalline silicon electrode layer, which is formed on a region for isolating a neighboring photodetector electrically, with a second polycrystalline silicon electrode layer through an insulating film. CONSTITUTION:A photodetector 4 in an n-type region, which is formed on the surface of a p-type semiconductor substrate 5, is electrically isolated from a neighboring photodetector by a channel stopping region 1. On the region 1, a first polycrystalline silicon electrode layer 2 and a second polycrystalline silicon electrode layer 3 are laminated and formed by way of an oxide film. A light-screening metal film 7 is formed through an interlayer insulating film 6. The film 7 optically isolated each photodetector 4. The upper surface and the side surface of the layer 2, which has the larger thickness and the smaller width than the layer 3, is covered by the layer 3. Thus the configuration of a step part is improved, end the film 6 can be made thin. |
