| 摘要 |
PURPOSE:To obtain a surface emission type semiconductor laser, threshold currents of which are lowered largely and the spread of outgoing laser beams of which is inhibited, by forming an inverted truncated cone-shaped hole extending over a current block layer, an etching stopping layer and the surface layer section of a substrate, shaping a semiconductor lower clad layer onto the block layer and into the hole and laminating and forming a semiconductor active layer and a semiconductor upper clad layer onto the clad layer in succession. CONSTITUTION:A semiconductor etching stop layer 2 and a current block layer 3 are shaped onto a P-type GaAs substrate 1, an etching mask is formed onto the block layer 3, leaving a circular opening at a central section, and an inverted truncated cone-shaped hole 4 is shaped through etching. A semiconductor lower clad layer 5 is formed onto the block layer 3 and into the hole 4. A semiconductor active layer 6, a semiconductor upper clad layer 7 and a cap layer 8 are laminated and shaped onto the lower clad layer 5 in succession. An upper window hole 13 is shaped to the cap layer 8 exposed to a circular hole 11 while a truncated cone-shaped lower window hole 14 is formed to the back of the hole 4 in the substrate 1 exposed to a circular hole 12. An upper reflecting film 15 and a lower reflecting film 16 are formed. |
