Method of covering a device with a first layer of silicon nitride and with a second layer of a polyimide, and device covered by means of the method.

摘要

The invention relates to a (semiconductor) device 1 at least one surface of which is covered with a first layer 3 of silicon nitride, which layer is made hydrophilic, after which a bonding agent is provided on the silicon nitride and a layer 4 of a photosensitive polyamide is then provided in which a pattern of apertures 5 is etched to give access to contact pads 2 for electrical connections, the bonding agent being a trialkoxysilane compound which comprises a primary amino group and which preferably comprises in addition at least one secondary amino group. The polyamide is finally converted to polyimide. By using the bonding agent, no undercutting occurs during etching the apertures in the polyamide layer and a good pattern definition is obtained.