| 摘要 |
PURPOSE:To shorten overall process move, and to shorten even a period up to delivery from the receipt of order by conducting ion implantation for writing data, using a poly Si film preventing the reaction of an Al electrode and Si as a mask. CONSTITUTION: The whole is coated with a CVD SiO2 film 8, and an opening 9 br a contact is shaped to a second insulating film 48, the CVD SiO2 film 8, on a drain region 2 and an SiO2 film 4. A poly Si film 10 is applied in approximately 2000Angstrom through a CVD method, and patterned, the poly Si film 10 in the upper section of a data cell writing cell is removed, and boron (B<+>) ions are implanted as a P-type impurity to form an ion implantation layer 7. A CVD SiO2 film 11A is applied as a first layer in a third insulating film, and a PSG film 11B as a second layer is applied. An opening exposing the poly Si film 10 as a lower layer is shaped to the PSG film 11B and the CVD SiO2 film 11A. The opening is formed where approximately similar to the opening 9 for the contact. An Al film is sputtered and patterned, thus forming an Al bit line 13. |
