| 摘要 |
PURPOSE:To prevent image defects and residual potential even during uses for a long time by using a photosensitive layer obtained by alternately laminating ultrathin film composed of Non-Si(Ge,Sn)(H,X) and ultrathin films composed of a nonmonocrystalline material having Fermi levels or/and band gaps different from said films in plural times, and using them as a light absorption layer. CONSTITUTION:The photoreceptive member has the light absorption layer 102 between a substrate 101 and a photosensitive layer 104. The layer 102 has the layer region A obtained by alternately, laminating 2 kinds of ultrathin films different in atomic composition or proportion in plural times, and a layer region B composed of a single thin layer, and the layer thicknesses of the ultrathin films near the interface between the layer regions A and B are made thinner than those of the ultrathin films of A located farther from the interface. The nonmonocrystalline material to be used, different in Fermi levels or/and band gaps from the Non-Si(Ge,Sn)(H,X) is the ones different in at least a part of constituent atoms or in at least the content of the constituent atoms from said Non-Si(Ge,Sn)(H,X). |
