| 摘要 |
PURPOSE:To completely separate an element region by an insulating film by forming a recess on a semiconductor substrate, forming an insulating film in the substrate by an ion implanting method, and single crystallizing a polycrystalline silicon layer deposited thereon by laser annealing. CONSTITUTION:A silicon substrate 1 is selectively opened with a photoresist 2 as a mask. Then, after the photoresist 2 is removed, oxygen ions 3 are wholly implanted into the substrate 1, and heat treated to form an oxide film 4 in the substrate 1. Then, after a polycrystalline silicon layer 5 is deposited on the top of the substrate 1, a laser beam 6 is emitted to anneal the layer 5, thereby single crystallizing it to form a single crystal silicon layer 7. Eventually, the layer 7 is coated with a resist 8 to flatten the upper surface, and to flatten by cutting until the film 4 already formed therein is exposed on the surface.
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