Top imaged resists.

摘要

The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.