| 摘要 |
<p>A static RAM includes a plurality of integrated circuit chips. Each chip comprises a plurality of memory cells (6) for storing data, column-selecting transistors (Q4,Q5), bit lines (B, @) to which the memory cells (6) and the column-selecting transistors (Q4,Q5) are connected, and a voltage control circuit (Q6,Q7) which can adjust the electrical potential of the bit lines (B, @) so as to allow the column-selecting transistors (Q4,Q5) to operate when selecting one of the chips. By means of the voltage control circuit (Q6,Q7) the static RAM can operate at high speed when not only address selecting operation but also chip selecting operation is required.</p> |
