| 摘要 |
PURPOSE:To reduce the cost of the manufacture of an element, and to improve mass productivity thereof by forming a transistor element section, using a gallium arsenide epitaxial growth layer having excellent crystallizability and insulated from a single crystal silicon substrate as an active layer on the substrate. CONSTITUTION:An silicon single crystal substrate 10 is annealed at 1000 deg.C in a hydrogen atmosphere in order to remove an oxide film first. A growth temperature is held at 900 deg.C, GaP is grown in an epitaxial manner and a first intermediate layer 31 is shaped, and the growth temperature is held at 700 deg.C and a second intermediate layer 32 and a third intermediate layer 33 as superlattices are grown in the epitaxial manner. Vanadium is doped in order to bring an intermediate layer 30 to semi-insulating properties. The growth temperature is held at 700 deg.C, and the active layer 50 of an n-type GaAs epitaxial layer and a cap layer 51 are grown continuously. Accordingly, since the active layer 50 is insulated automatically from the substrate, a process in which an insulating layer is formed is unnecessitated, thus simplifying manufacture. |
