| 摘要 |
PURPOSE:To elevate the density of a large-scale integrated circuit and increase working speed thereof by transmitting an input signal over a semiconductor region (e) under the state in which supply voltage is applied to a semiconductor region (a), a semiconductor region (d) is grounded and fixed voltage is applied to a semiconductor region (c). CONSTITUTION:A vertical type MISFET using a semiconductor region (e) as a gate electrode and a section along the inner wall of a groove in a semiconductor region (a) as a channel and a vertical type JFET employing a semiconductor region (c) as a gate electrode and a region, which forms one part of the semiconductor region (a) and the periphery of which is covered with the semiconductor region (c), as a channel are shaped, and the two FETs are connected in a semiconductor region (b), thus forming a signal inversion circuit using the vertical type MISFET as a drive transistor and the vertical type JFET as a load transistor. When input voltage is at a 'high level', the channel 11 in the vertical type MISFET 15 is brought to a conductive state, currents flow through a drain electrode 5-a channel region 13-a source electrode (a drain electrode) 6-channel regions 12, 11-a source electrode 7, and output voltage (a 'low' level) determined by the ON resistanc ratio of the vertical type MISFET 15 and the vertical type JFET is acquired as output voltage. |
