| 摘要 |
PURPOSE:To form structure having no overhang section in order to prevent the lowering of breakdown strength due to the overhang section by processing a lower electrode for a stacked capacitor through oxidation by the self- alignment of a dielectric film. CONSTITUTION:The form of the end section of an silicon nitride film 10 as a dielectric film takes a parallel or slightly pushed-up wind shape because lower polycrystalline silicon 9 is oxidized by self-alignment using the silicon nitride film 10 as the dielectric film as a mask and polycrystalline silicon is converted into an oxide film 12 while being cubically expanded in the forms of the end sections of a lower electrode and the dielectric film. Consequently, the lower electrode 9 and an upper electrode 13 are not short-circuited, and the dielectric film is not shaped irregularly and no stress is applied. The lowering of capacitor breakdown strength resulting from an overhang section which has been at issue is improved, and yield and reliability are also enhanced. |
