发明名称 Insulating resin composition and semiconductor device using the same.
摘要 <p>Insulating resin composition for a semiconductor device having a multilevell interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.</p>
申请公布号 EP0251828(A1) 申请公布日期 1988.01.07
申请号 EP19870305975 申请日期 1987.07.06
申请人 HITACHI CHEMICAL CO., LTD. 发明人 SUZUKI, HIROSHI YAMAZAKI WORKS;UCHIMURA, SHUNICHIROÂYAMAZAKI WORKS;SATO, HIDETAKA HITACHI CHEMICAL CO.AMERICA LTD.
分类号 H01L21/31;C08G73/10;H01B3/30;H01L21/312;H01L21/331;H01L21/768;H01L23/522;H01L29/73;H01L29/732 主分类号 H01L21/31
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