发明名称 VAPOR PHASE REACTION EQUIPMENT
摘要 <p>PURPOSE:To avoid the adhesion of a foreign matter to a wafer by making a through hole in a tapered shape, a push pin inserted in the through hole in the same shape and surfaces in the same plane when the wafer mounted on a susceptor is raised by the push pin through the susceptor after a thin film is formed on the wafer. CONSTITUTION:A plurality of through holes 20 are made from the upper surface to the lower surface of a stainless steel wafer susceptor 4 concentrically, each through hole 20 is pierced with a push pin 30, the push pin 30 is raised by a push up mechanism after a thin film is formed and a wafer is separated from the susceptor 4. In this constitution, the through hole 20 has a shape of tapered oblique surface 22 extending upwards and the push pin inserted in the hole 20 also has the tapered surface fitting to the hole 20. Further, the outer diameter of the top of the pin 30 is made the same to the inner diameter of the top of the hole 20 and the surfaces are made in the same plane when the pin 30 is inserted in the hole 20. This prevents the invasion of a reaction gas in the hole 20 and a foreign matter does not adhere to the wafer.</p>
申请公布号 JPS631044(A) 申请公布日期 1988.01.06
申请号 JP19860144272 申请日期 1986.06.20
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 OOYAMA KATSUMI;HIKIMA HITOSHI;TAKAMI KATSUMI
分类号 H01L21/677;C23C16/44;H01L21/31;H01L21/67;H01L21/68 主分类号 H01L21/677
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