| 摘要 |
PURPOSE:To reduce the area of a semiconductor memory cell with a grooving type capacitor by conducting a polycrystalline semiconductor forming the grooving type capacitor and a transistor source region in the circular section of a substrate while directly shaping an oxide film from the polycrystalline semiconductor. CONSTITUTION:An impurity low-concentration layer 12 as a source region in a transistor forming a semiconductor dynamic RAM cell together with a grooving type capacitor is shaped onto a substrate 11 containing an impurity in high concentration as one electrode of the capacitor. When grooves are formed to these substrate 11 and layer 12 through masks, one parts of capacitor insulating films 14 shaped to the grooves are removed and the insides of the grooves are buried with polycrystalline silicon 15, the polycrystalline silicon 15 and the layer 12 are self-aligned in the substrate in the lower section of the surface of the substrate, and conducted and connected under the state in which allowance on a design is not required when the surface of the polycrystalline silicon 15 is oxidized directly, the polycrystalline silicon 15 in both grooves forming a capacitor is coated with self-alignment oxide films and insulated, and allowance on the design is not required. Accordingly, the area of a semiconductor memory cell with the grooving type capacitor is reduced. |
