| 摘要 |
PURPOSE:To inhibit the deterioration and variation in characteristics generated by an interface level formed on the interface, and to obtain an FET having excellent electrical characteristics by constituting an interposition layer having a predetermined energy-band gap value between a semiconductor layer and a gate insulating film. CONSTITUTION:Mo is sputtered onto a glass substrate 11 to shape a gate electrode 12. SiOX 13 is deposited as a gate insulating film. An SiN film 14 is deposited onto SiOx 13. a-Si 15 and n<+> a-Si 16 are deposited. An a-Si island is formed as a Tr section, and Mo and Al are evaporated to shape source-drain electrodes 17 (17a, 17b). An<+> a-Si in a channel section is removed through chemical etching. Since the graded layer 14 (thickness of 5-100nm), an energy-band gap value of which is increased toward the insulating film 13 from the a-Si layer 15, is interposed between the gate insulating film 13 and the a-Si film 15, traps by an interface level are decreased, thus improving electrical characteristics. |
