发明名称 |
Semiconductor device turned on and off by light |
摘要 |
A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO thyristor section supplies an igniting signal to the gate of the main GTO thyristor in accordance with an optical signal. The MOS transistor supplies an extinguishing signal to the gate of the main GTO thyristor section in accordance with an optical signal supplied to it.
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申请公布号 |
US4717947(A) |
申请公布日期 |
1988.01.05 |
申请号 |
US19840675150 |
申请日期 |
1984.11.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUDA, HIDEO;TSUNODA, YOSHIAKI;FUJIWARA, TAKASHI;USUI, YASUNORI |
分类号 |
H01L31/10;H01L29/74;H01L29/744;H01L29/745;H01L29/749;H01L31/111;(IPC1-7):H01L29/74;H01L27/02;H01L29/78;H01L27/14 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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