| 摘要 |
A silicon nitride layer is formed on a substrate by reacting (1) silicon fluoride, (2) nitrogen or nitrogen hydride and (3) nitrogen fluoride by a chemical vapor deposition method using thermal energy and/or optical energy. According to the invention process, fluorine is added to the silicon nitride layer to make Si-F bonds, by which the amount of Si-H bonds can be reduced less than 1/10 as compared with that of silicon nitride made by the conventional reaction between SiH4 and HN3. Silicon nitride layer according to the invention will highly enhance the reliability of IC, LSI.
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