发明名称 |
Gated parallel power switching devices protection circuit |
摘要 |
Two or more gated type power switches, particularly mosfets, are disclosed in a protection circuit which protects the other power switches should one of them short to its respective gate. The circuit includes elements for sensing the occurrence of the failure, for carrying or diverting excess current from the gates, and increasing the impedance of the gates to minimize any damage. The circuit prevents the failure of one mosfet in a drain to gate short mode from destroying or damaging the other parallel mosfets. The invention results in easier analysis and repair of any damage should a breakdown occur, and for the first time makes practical the use of many mosfets in parallel for power switching applications.
|
申请公布号 |
US4717996(A) |
申请公布日期 |
1988.01.05 |
申请号 |
US19870003066 |
申请日期 |
1987.01.14 |
申请人 |
BEST POWER TECHNOLOGY, INC. |
发明人 |
BOURKE, ROBERT F.;LAYDEN, DAVID L.;COOK, RICHARD I. |
分类号 |
H02H7/12;H02M3/10;H03K17/0812;H03K17/12;(IPC1-7):H02H7/122 |
主分类号 |
H02H7/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|