| 摘要 |
A semiconductor device including a field effect transistor, such as an insulated gate field effect transistor, which has in the direction from source zone to drain zone successive first and second channel zones with associated gate electrode parts. According to the invention, over at least 80% of the overall channel width, in a direction at right angles to the direction of source-drain current, the ratio L1/L2 between the length L1 of the first gate electrode part and the length L2 of the second gate electrode part is variable and smaller than unity in order to improve the linearity of the field effect transistor.
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