发明名称 Dual-cathode electron emission device
摘要 The efficiency of a semiconductor cathode can be increased by bombarding the electron-emitting regions (8) with an electron beam (8), which frees the surface from adhered oxygen particles. The electron beam preferably originates from a second semiconductor cathode (42), which has an opening (42) for passing the electron beam (20) of the first semiconductor cathode (20). Alternatively, both semiconductor cathodes can be realized in one semiconductor body.
申请公布号 US4717855(A) 申请公布日期 1988.01.05
申请号 US19860832952 申请日期 1986.02.26
申请人 U.S. PHILIPS CORPORATION 发明人 ZWIER, JAN;VASTERINK, JOHANNES H. A.
分类号 H01J1/308;(IPC1-7):H01J19/24 主分类号 H01J1/308
代理机构 代理人
主权项
地址