发明名称 Electrophotographic photosensitive member using microcrystalline silicon
摘要 In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate; a first layer of a photoconductive layer on the barrier layer, and a second layer on the first layer. Formed of microcrystalline silicon containing hydrogen, the first layer is highly sensitive to long-wavelength light. The second layer contains hydrogen and at least one element selected from carbon, oxygen, and nitrogen. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.
申请公布号 US4717637(A) 申请公布日期 1988.01.05
申请号 US19860877318 申请日期 1986.06.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIZAWA, SHUJI;MITANI, WATARU;YAMAMOTO, MARIKO;SANJOH, AKIRA;IKEZUE, TATSUYA
分类号 G03G5/082;(IPC1-7):G03G5/14 主分类号 G03G5/082
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