发明名称 |
CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure |
摘要 |
A CMOS input level shifting circuit includes a temperature-compensating N-channel field effect transistor structure wherein a resistance in series with the source region includes an extension of a lightly doped P-type region in which the source and drain regions are diffused. This structure produces a temperature-compensating variation in the drain current proportional to the square of the series resistance without requiring modification of standard processes for manufacturing CMOS integrated circuits. The relatively large, temperature-dependent variation of the series resistance produces a corresponding temperature-dependent variation in the drain current that effectively temperature-compensates the switching point of the CMOS input level shifting circuit.
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申请公布号 |
US4717836(A) |
申请公布日期 |
1988.01.05 |
申请号 |
US19860825863 |
申请日期 |
1986.02.04 |
申请人 |
BURR-BROWN CORPORATION |
发明人 |
DOYLE, JAMES T. |
分类号 |
H01L21/8238;H01L27/02;H01L27/092;H03F1/30;H03F3/345;H03K19/003;H03K19/0185;(IPC1-7):H03K17/14 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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