| 摘要 |
A semiconductor device substrate which is sintered by a hot-pressing method at a very high temperature and under high pressure has two main faces parallel to each other, and a plurality of wires (2) formed therein to extend therethrough to end at these main faces. Semiconductor pellets (18) are bonded onto one main face, and a plurality of leads (27) are mounted onto the other main face. The substrate is made of silicon carbide containing a small quantity of beryllium, and the wires (2) of zirconium boride. A plate is prepared by preforming a powder of the substrate material and a plurality of wire stripes are printed thereon. A plurality of such plates laid over each other and hot-pressed provide a block which is sliced along planes normal to the wires, so that substrates are fabricated from the slices. Several layers (13, 14) of wiring may be formed on the substrate faces. <IMAGE> |
