| 摘要 |
PURPOSE:To obtain stabilized transverse mode oscillations by a method wherein, when a clad layer, an active layer, an optical guide layer and a clad layer are laminatedly grown on a semiconductor substrate, these layers are formed into a mesa form and a semiconductor laser is constituted by surrounding these layers with a layer having a forbidden band width wider than that of the active layer and having a smaller refractive index than that, the thickness of the clad layer adjacent to the optical guide layer is set at 0.1mum or less and at the same time, a layer, which has a light absorption function, is provided thereon. CONSTITUTION:An N type Ga0.70Al0.30As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, an N type Ga0.74Al0.26As optical guide layer 4, a P type Ga0.55Al0.45 clad layer 5 of a thickness of 0.1mum or less and a P type Ga0.88Al0.20As layer 6 having a function of light absorption are laminatedly grown on an N type GaAs substrate 1. Then, these layers are processed in a mesa form and surrounded with a P type Ga0.55Al0.45As buried layer 7 provided in the surface layer part of the substrate 1 and an N type Ga0.55Al0.45As buried layer 8, which is located on the buried layer 7 and has a forbidden band width wider than that of the layer 3, and at the same time, has a smaller refractive index. |
