Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film

摘要

A metal silicide film is formed on the sides of a polycrystalline silicon layer formed on a semiconductor substrate via an insulating film and the surface of the metal silicide film is covered by a silicon oxide film, whereby the silicon layer has a low electrical resistance and no short-circuiting is necessary. For example, in an insulated gate field effect transistor, the gate electrode is constituted by the polycrystalline silicon layer and the metal silicide film at the side walls of the polycrystalline silicon layer. Such a gate electrode has a low electrical resistance and does not cause undesirable short-circuiting with source and drain regions by the existence of the silicon oxide film formed on the surface of the metal silicide film. Also, other metal silicide film may be formed on the upper surface of the gate electrode. Moreover the silicide-SiO2 structure may be used on the source and drain regions.