| 摘要 |
PURPOSE:To make a reproduced picture image with excellent resolution while averting the effect of a distant scattering body by means of providing a reflecting film on the overall surface of device photodetectors. CONSTITUTION:A reflecting film 9 is provided on the overall surface of a pic ture element. Any infrared rays a or b aribtrarily entered into the main surface of a p type silicon substrate 6 even if not absorbed into photodetectors 15 are reflected by the reflecting film 9 without fail. The reflected infrared rays are entered into the photodetector 15 once passed through before they are reflected by the reflecting film 9 or the adjoining photodetector 15 at the farthest. Through these procedures, the quantum effect can be heightened by making use of reflected infrared rays without being affected by a distant scattering body 16 or deteriorating the resolution. |
