| 摘要 |
PURPOSE:To enable stable connection of a wiring to a diffusion layer to be performed through conductive vapor growth films on contact side walls without extremely thin parts and disconnection parts being formed on evaporation of the metallic wiring, by forming the conductive films on the side walls of the contact hole by using a vapor growth method. CONSTITUTION:A diffusion layer 4 is formed on a substrate 5, and selective anisotropic etching of an insulating film 2 on the diffusion layer 4, on which the insulating film 2 is made to grow, is performed to form a contact hole, and thereafter conductive vapor growth films 3 are made to grow on the inner walls of the contact hole and on the insulating film. When etching is stopped at the time when the conductive vapor growth films 3 on the insulating film are completely removed by the anisotropic etching, the conductive vapor growth films remain only on the contact side walls. By evaporating metals thereon to form a wiring 1, connection of the wiring 1 to the diffusion 4 is performed through the conductive films. Hence, secure contact can be realized without an area of the contact opening part being increased even in fine contact processing.
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