| 摘要 |
<p>PURPOSE:To attain the temperature correction by a component itself of the oscillation circuit by making each resistance-temperature characteristic of the 2nd resistor whose one terminal is connected to an output stage of a CMOS inverter and of the 1st resistor dividing a reference voltage different from each other in a relation to cancel the temperature-frequency characteristic of the oscillator circuit itself. CONSTITUTION:Since resistors 11, 12 are P<+> resistors and a resistor 13 is a P<-> resistor, the rate of fluctuation of the resistor 13 with respect to temperature is larger than that of the resistors 11, 12. Thus, an H level reference voltage at a high temperature is lower than that at room temperature, an L level reference voltage is higher than that at room temperature, conversely an H level reference voltage at a low temperature is higher than that at room temperature and the L level reference voltage is lower than that at room temperature. The difference between the H and L level reference voltages at a high temperature is smaller than that at room temperature and the difference at low temperature is larger than that at room temperature. Thus, the charge/discharge time at each period is shorter at high temperature than that at room temperature and longer at low temperature and the oscillated frequency fos is faster at high temperature and slower at low temperature.</p> |
