发明名称 MAGNETIC MEMORY ELEMENT
摘要 PURPOSE:To decrease the action defect due to the heating and disconnection of an element by forming a soft magnetic body fine wire so as to have unevenness in accordance with the arranging period of a stripe domain in the film thickness direction of a ferromagnetic body film. CONSTITUTION:By constituting two conductors 6 and 7 with a two-layer conductor, the conductor 6 is not close to a soft magnetic body fine wire 5 and the conductor 7 is not close to a soft magnetic body fine wire 4. When a soft magnetic body fine wire is formed by an insulating body such as a YIG sputtering film, the soft magnetic body fine wire can be allowed directly to contact with a conductor and the necessary current can be minimized. The soft magnetic body fine line 4 close to the conductor 6 arranges the conductor 6 so that the direction magnetized with the adjoining soft magnetic fine wire 4 can be the reverse direction. In such case, a case when the conductor 6 close at the section of the adjoining soft magnetic body fine wire 4 comes on the fine wire and a case when it comes under the fine wire are alternately realized. For the case of the soft magnetic body fine wire 5 close to the conductor 7, the same operation is executed, and the close conductor 7 is positioned alternately in the upper and lower directions to the adjoining fine wire 5.
申请公布号 JPS62298992(A) 申请公布日期 1987.12.26
申请号 JP19860143390 申请日期 1986.06.18
申请人 NEC CORP 发明人 MATSUDERA HISAO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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